Texas Instruments · FemtoFET™ Series
Texas Instruments FemtoFET™ series, N-Channel MOSFET, 30 V drain-source, 2.3 A continuous drain, 64 mOhm Rds(on) at 8 V gate drive, 3-PICOSTAR surface-mount package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | FemtoFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 8V |
| Current - continuous drain (Id) @ 25°C | 2.3A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | 10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XFDFN |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 64mOhm @ 500mA, 8V |
| Gate charge (Qg) (Max) @ vgs | 2.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 347 pF @ 15 V |
The 1.2 V gate threshold at 250 µA means it can turn on from a 1.8 V logic rail, though the on-resistance is specified at 1.8 V and 8 V drive levels — at the lower drive voltage, expect higher Rds(on) than the 64 mOhm figure.
It is ROHS3 compliant, which means no restricted substances under the current EU exemption list.
