Texas Instruments FemtoFET™ series, N-Channel MOSFET, 30 V drain-source, 2.3 A continuous drain, 64 mOhm Rds(on) at 8 V gate drive, 3-PICOSTAR surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | FemtoFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 8V |
| Current - continuous drain (Id) @ 25°C | 2.3A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | 10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XFDFN |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 64mOhm @ 500mA, 8V |
| Gate charge (Qg) (Max) @ vgs | 2.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 347 pF @ 15 V |
The 1.2 V gate threshold at 250 µA means it can turn on from a 1.8 V logic rail, though the on-resistance is specified at 1.8 V and 8 V drive levels — at the lower drive voltage, expect higher Rds(on) than the 64 mOhm figure.
It is ROHS3 compliant, which means no restricted substances under the current EU exemption list.
Yes, CSD17382F4T is ROHS3 compliant, meeting the current EU RoHS exemption-free requirements.
The maximum power dissipation is 500 mW at 25°C ambient. Derate above that temperature per the thermal curve in the datasheet.
Both parts are N-channel FemtoFET™ MOSFETs in the same 3-PICOSTAR package, but the CSD17382F4T is rated for 30 V drain-source and 2.3 A continuous drain, while the CSD17381F4 is a different variant. Check the specific voltage and current requirements of your application before substituting.