Texas Instruments NexFET™ N-Channel MOSFET, 30V Vdss, 25A Id, 15.1mOhm Rds(on) @ 8V, 6-WSON (2x2) package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 8V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 16W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 15.1mOhm @ 8A, 8V |
| Gate charge (Qg) (Max) @ vgs | 6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 879 pF @ 15 V |
CSD17318Q2 gate charge is 6 nC at 4.5 V. Input capacitance is 879 pF at 15 V drain-source. The recommended drive voltage spans 2.5 V to 8 V; the 8 V drive achieves the minimum Rds(on), while 2.5 V logic-level drive still turns the device on, though with higher on-resistance. Gate-source maximum is ±10 V.
Maximum power dissipation is 16 W at the case, and the operating junction temperature range is -55 °C to 150 °C.
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