Texas Instruments NexFET™ N-Channel MOSFET, 30 V Vdss, 21 A (Ta) / 100 A (Tc), 5.1 mOhm Rds(on) at 20 A, 8-VSONP (5x6) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 3V, 8V |
| Current - continuous drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Power dissipation | 3.1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +10V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 5.1mOhm @ 20A, 8V |
| Gate charge (Qg) (Max) @ vgs | 11.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1560 pF @ 15 V |
With a maximum gate charge of 11.6 nC at 4.5 V, the CSD17310Q5A switches fast with a modest gate driver. The 1560 pF input capacitance at 15 V drain is moderate — a standard gate driver will slew the gate in tens of nanoseconds.
For dual-source planning, TI's NexFET family includes several 30 V N-channel parts in the same VSONP footprint — check the TI cross-reference tool for pin-compatible options with different Rds(on) or current ratings.
TI's NexFET family includes several 30 V N-channel MOSFETs in the 8-VSONP package with similar Rds(on) and current ratings. The closest pin-compatible alternative would be another TI NexFET part in the same 5x6 VSONP footprint — use the TI cross-reference tool to match Rds(on) and gate charge to your specific switching frequency and load current.
Yes. The drive voltage range is 3 V to 8 V, so a 5 V gate drive signal will turn the MOSFET on. However, the Rds(on) at 5 V will be higher than the 5.1 mOhm figure quoted at 8 V — expect roughly 6 to 7 mOhm at 5 V gate drive. For lowest conduction loss, drive the gate to 8 V if your controller allows it.