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Texas Instruments CSD17308Q3T
Texas Instruments

CSD17308Q3T NexFET N-Ch MOSFET, 30V, 10.3mOhm, 8-VSON

MPNCSD17308Q3T
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, 30 V drain-source, 14 A (Ta) / 44 A (Tc) continuous drain, 10.3 mOhm max Rds(on) at 10 A, 8 V, 5.1 nC gate charge, 8-VSON-CLIP (3.3x3.3 mm) package, -55 to 150 °C junction temperature.

$1.01Ref. price · indicative, final on quote
CSD17308Q3T datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CSD17308Q3T Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)3V, 8V
Current - continuous drain (Id) @ 25°C14A (Ta), 44A (Tc)
Power dissipation2.7W (Ta), 28W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+10V, -8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs10.3mOhm @ 10A, 8V
Gate charge (Qg) (Max) @ vgs5.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 15 V

Product details

Thermal and environmental ratings

The CSD17308Q3T: Junction temperature range of -55 to 150 °C covers automotive under-hood and high-ambient industrial enclosures. Maximum power dissipation is 2.7 W at ambient and 28 W at the case, reflecting the thermal capability of the VSON-CLIP package with its exposed pad. The device is ROHS3 compliant.

Lifecycle and sourcing

The CSD17308Q3T is listed as Active with no end-of-life notification. The ROHS3 compliance is on record, so no separate waiver is needed for lead-free assembly.

Frequently asked questions

What is the Rds(on) of CSD17308Q3T?

Maximum on-resistance is 10.3 mOhm at 10 A drain current with 8 V gate drive.

What is the gate charge of CSD17308Q3T?

Maximum gate charge is 5.1 nC at 4.5 V gate-source voltage.

Does CSD17308Q3T have a RoHS compliant version?

Yes, the CSD17308Q3T is ROHS3 compliant.

What is the thermal resistance of CSD17308Q3T?

Maximum power dissipation is 2.7 W at ambient temperature (Ta) and 28 W at the case (Tc). The VSON-CLIP package with exposed pad provides the thermal path.