Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ N-Channel MOSFET, 30 V drain-source, 14 A continuous drain (Ta) / 73 A (Tc), 10.5 mOhm Rds(on) at 11 A, 8 V, 5.2 nC gate charge, 8-PowerTDFN (5x6 mm) surface-mount package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 3V, 8V |
| Current - continuous drain (Id) @ 25°C | 14A (Ta), 73A (Tc) |
| Power dissipation | 3W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +10V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 10.5mOhm @ 11A, 8V |
| Gate charge (Qg) (Max) @ vgs | 5.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 700 pF @ 15 V |
No last-time-buy or obsolescence notice is in effect. For current pricing and availability, submit an RFQ — lead times and quantity breaks are confirmed at quote time through independent distribution channels.
