CSD17304Q3

Texas Instruments · NexFET™ Series

Texas Instruments NexFET™ N-Channel MOSFET, CSD17304Q3, 30 V Vdss, 15 A (Ta) / 56 A (Tc) continuous drain, 7.5 mOhm Rds(on) at 17 A, 8 V, 6.6 nC Qg, 8-VSON-CLIP (3.3x3.3 mm), -55 to 150 °C.

Texas Instruments CSD17304Q3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD17304Q3 specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)3V, 8V
Current - continuous drain (Id) @ 25°C15A (Ta), 56A (Tc)
Power dissipation2.7W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+10V, -8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 17A, 8V
Gate charge (Qg) (Max) @ vgs6.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds955 pF @ 15 V

Technical details

NexFET 30 V switch — Rds(on) and Qg trade-off

The CSD17304Q3 is a Texas Instruments NexFET N-channel MOSFET rated for 30 V drain-source and 15 A continuous drain at 25 °C ambient (56 A at case).

Package and thermal — 8-VSON-CLIP

Housed in an 8-VSON-CLIP (3.3x3.3 mm) with an exposed drain pad — the supplier package code 8-VSON-CLIP tells the PCB layout engineer the pad pattern and thermal via array needed to pull heat into the board plane. The 2.7 W power dissipation at ambient (Ta) is the limit without a heatsink; the case-rated 56 A assumes the pad is soldered to a sufficient copper area.

CSD17304Q3
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