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Texas Instruments CSD17301Q5A

CSD17301Q5A NexFET N-Channel MOSFET, 30V, 2.6mOhm Rds(on)

MPNCSD17301Q5A
End of Life

Texas Instruments NexFET™ series, CSD17301Q5A N-Channel MOSFET, 30V Vdss, 2.6mOhm Rds(on) at 25A, 8V gate drive, 100A continuous drain at case temperature, 8-PowerTDFN package, -55°C to 150°C operating junction temperature.

$1.64Ref. price · indicative, final on quote
Texas Instruments CSD17301Q5A datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CSD17301Q5A specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)3V, 8V
Current - continuous drain (Id) @ 25°C28A (Ta), 100A (Tc)
Power dissipation3.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+10V, -8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.55V @ 250µA
Rds on (Max) @ id, vgs2.6mOhm @ 25A, 8V
Gate charge (Qg) (Max) @ vgs25 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3480 pF @ 15 V

Product details

NexFET N-Channel MOSFET for low-voltage switching

The Texas Instruments CSD17301Q5A is a 30 V N-Channel NexFET power MOSFET in an 8-PowerTDFN surface-mount package. The 2.6 mOhm maximum on-resistance at 25 A and 8 V gate drive keeps conduction losses low in the 3 V to 8 V drive range.

Gate charge is 25 nC at 4.5 V. Input capacitance is 3480 pF at 15 V drain-source.

For dual-sourcing, Texas Instruments' NexFET family includes several 30 V N-channel parts in similar footprints; qualifying an alternate from the same process node is straightforward if you need supply resilience.

Frequently asked questions

What is the equivalent of CSD17301Q5A?

Texas Instruments' NexFET family includes several 30 V N-channel MOSFETs in similar 5x6 mm PowerTDFN packages. A pin-compatible equivalent would share the same footprint and gate-drive voltage range; check the specific Rds(on) and gate charge for your switching frequency before substituting.