CSD16411Q3

Texas Instruments · NexFET™ Series

Texas Instruments CSD16411Q3 NexFET N-Channel MOSFET, 25 V drain-source, 14 A (Ta) / 56 A (Tc) continuous drain, 10 mOhm Rds(on) at 10 V, 8-PowerVDFN / 8-VSONP (3x3.15 mm) package, -55°C to 150°C junction temperature.

Texas Instruments CSD16411Q3
Download datasheet (PDF)
[IN STOCK] In Stock: 10 pcs
$1.90/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD16411Q3 specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C14A (Ta), 56A (Tc)
Power dissipation2.7W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+16V, -12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs3.8 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds570 pF @ 12.5 V

Technical details

NexFET N-Channel switch — 25 V, 14 A / 56 A

The Texas Instruments CSD16411Q3 is a 25 V N-Channel NexFET power MOSFET in an 8-PowerVDFN package. It delivers 14 A continuous drain current at 25°C ambient (Ta) and 56 A with the case held at 25°C (Tc). The 10 mOhm max on-resistance at 10 V gate drive keeps conduction losses low.

Temperature range and package

Junction temperature range is -55°C to 150°C. The package is a surface-mount PowerVDFN with an exposed pad for thermal dissipation — board layout should match the recommended copper area for 2.7 W power dissipation at ambient.

Lifecycle and compliance

The CSD16411Q3 is listed as Active with ROHS3 compliance. No end-of-life notice or last-time-buy schedule is in effect, so it qualifies for new designs and production BOMs without short-term obsolescence risk.

CSD16411Q3
[ALLOC] verified
Quote