Texas Instruments NexFET N-Channel MOSFET, 25 V drain-source, 100 A continuous drain current, 1.6 mOhm max Rds(on) at 10 V, 8-VSON-CLIP (5x6) surface-mount package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 3.1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.9V @ 250µA |
| Rds on (Max) @ id, vgs | 1.6mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4100 pF @ 12.5 V |
The 1.6 mOhm max on-resistance at 40 A with a 10 V gate drive suits low-voltage, high-current synchronous buck converter and OR-ing / load-switch applications.
For dual-sourcing resilience, the NexFET family includes several 25 V N-channel parts in the VSON-CLIP package, but pin compatibility should be verified against the specific footprint and gate-drive requirements.
The maximum on-resistance is 1.6 mOhm at 40 A drain current with a 10 V gate drive. At 4.5 V gate drive the Rds(on) is higher — the datasheet curve shows the typical value.
Within the TI NexFET family there are several 25 V N-channel parts in the 8-VSON-CLIP package, such as the CSD16403Q5A and CSD16404Q5A. These differ in Rds(on) and gate charge — verify the specific rating against your design's conduction loss and switching loss budget before substituting.