CSD16325Q5
Texas Instruments · NexFET™ Series
MOSFET N-CH 25V 33A/100A 8VSON
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 3V, 8V |
| Current - continuous drain (Id) @ 25°C | 33A (Ta), 100A (Tc) |
| Power dissipation | 3.1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +10V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.4V @ 250µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 30A, 8V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4000 pF @ 12.5 V |
CSD16325Q5
[ALLOC] verified