CSD13380F3T

Texas Instruments · FemtoFET™ Series

Texas Instruments CSD13380F3T FemtoFET N-Channel MOSFET, 12V Vdss, 3.6A Id, 76mOhm Rds(on) at 4.5V, 1.2nC gate charge, 3-XFDFN / 3-PICOSTAR package, -55 to 150°C.

Texas Instruments CSD13380F3T
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[IN STOCK] In Stock: 22 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD13380F3T specifications
Parameter / AttributeSpecification / Value
SeriesFemtoFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C3.6A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs8V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs76mOhm @ 400mA, 4.5V
Gate charge (Qg) (Max) @ vgs1.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds156 pF @ 6 V

Technical details

The 76 mOhm maximum on-resistance at 4.5 V gate drive and 400 mA is the figure to use for conduction-loss estimates. At 1.8 V drive the Rds(on) is higher — the datasheet curve shows it, but the guaranteed max is at 4.5 V. If your logic rail is 1.8 V, expect higher losses; plan the copper pour accordingly. Input capacitance is 156 pF at 6 V Vds, so rise/fall times stay short even with a weak source.

Package reality — tiny, so handle with care

The 3-XFDFN / 3-PICOSTAR is a leadless package.

This part is active and ROHS3 compliant. For volume or sample quantities, we source and quote to order against an RFQ.

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