US1J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation US1J
Download datasheet (PDF)
[IN STOCK] In Stock: 19,025 pcs
$0.02/ pc

Volume pricing

Buy Now

Subtotal:$1.00

MOQ 50 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

US1J specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-65°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-214AC, SMA
Capacitance @ vr,10pF @ 4V, 1MHz
Reverse recovery time75 ns
US1J
[ALLOC] verified
Quote