TSM650P03CX RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 30V 4.1A SOT23
[IN STOCK] In Stock: 165 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 4.1A (Tc) |
| Power dissipation | 1.56W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.4 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 810 pF @ 15 V |
TSM650P03CX RFG
[ALLOC] verified