TSM2309CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 60V 3.1A SOT23

Taiwan Semiconductor Corporation TSM2309CX RFG
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[IN STOCK] In Stock: 5,345 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TSM2309CX RFG specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.1A (Tc)
Power dissipation1.56W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs8.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds425 pF @ 30 V
TSM2309CX RFG
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