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Taiwan Semiconductor Corporation TSM170N06CH C5G

Taiwan Semiconductor Corporation TSM170N06CH C5G

MPNTSM170N06CH C5G
Active

MOSFET N-CHANNEL 60V 38A TO251

$0.92Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM170N06CH C5G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation46W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs17mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs28.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds900 pF @ 25 V