TSM170N06CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 38A TO251
[IN STOCK] In Stock: 495 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 38A (Tc) |
| Power dissipation | 46W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 17mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 28.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 900 pF @ 25 V |
TSM170N06CH C5G
[ALLOC] verified