S1J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation S1J
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

S1J specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-65°C ~ 175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AC, SMA
Capacitance @ vr,15pF @ 4V, 1MHz
Reverse recovery time2.5 µs
S1J
[ALLOC] verified
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