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Taiwan Semiconductor Corporation RS1GL RVG — Discrete Semiconductors

Taiwan Semiconductor Corporation RS1GL RVG

MPNRS1GL RVG
Active

DIODE GP 400V 800MA SUB SMA

$0.4700Ref. price · indicative, final on quote
PackagingDO-219AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RS1GL RVG specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 800 mA
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified800mA
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-219AB
Capacitance @ vr,10pF @ 4V, 1MHz
Reverse recovery time150 ns