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Taiwan Semiconductor Corporation ES1JL — Discrete Semiconductors

Taiwan Semiconductor Corporation ES1JL

MPNES1JL
NRND

DIODE GEN PURP 600V 1A SUB SMA

$0.3800Ref. price · indicative, final on quote
PackagingDO-219AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ES1JL Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseDO-219AB
Capacitance @ vr, f8pF @ 4V, 1MHz
Reverse recovery time35 ns