Taiwan Semiconductor Corporation ES1JL
MPNES1JL
NRND
DIODE GEN PURP 600V 1A SUB SMA
$0.3800Ref. price · indicative, final on quote
PackagingDO-219AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 1 A |
| Current - reverse leakage @ vr | 5 µA @ 600 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | Standard |
| Case | DO-219AB |
| Capacitance @ vr, | 8pF @ 4V, 1MHz |
| Reverse recovery time | 35 ns |