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Taiwan Semiconductor Corporation ES1DL

Taiwan Semiconductor Corporation ES1DL

MPNES1DL
Active

DIODE GEN PURP 200V 1A SUB SMA

$0.03228Price · pay online now
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$0.03 / ea · total $0.60

83,040 in stock — maximum per order · MOQ 20 · 3–4 days lead time

$0.03 / ea from 200 pcs

PackagingDO-219AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ES1DL specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if950 mV @ 1 A
Current - reverse leakage @ vr5 µA @ 200 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-219AB
Capacitance @ vr,10pF @ 4V, 1MHz
Reverse recovery time35 ns