1N5821

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation 1N5821
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MOQ 5 · Bag · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1N5821 specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if500 mV @ 3 A
Current - reverse leakage @ vr500 µA @ 30 V
Current - average rectified3A
Operating temperature - junction-65°C ~ 125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBag
CaseDO-201AD, Axial
Capacitance @ vr,190pF @ 4V, 1MHz
1N5821
[ALLOC] verified
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