ULQ2003A

STMicroelectronics

STMicroelectronics ULQ2003A, 7 NPN Darlington transistor array, 500 mA collector current, 50 V Vce breakdown, 16-DIP (0.300", 7.62 mm) through-hole package, tube.

STMicroelectronics ULQ2003A
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MOQ 5 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ULQ2003A specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
FET type7 NPN Darlington
Voltage - collector emitter breakdown50V
Current - collector (Ic)500mA
DC current gain (hFE) (Min) @ ic, vce1000 @ 350mA, 2V
Operating temperature150°C (TJ)
PackageTube
Case16-DIP (0.300\", 7.62mm)
Vce saturation (Max) @ ib, ic1.6V @ 500µA, 350mA

Technical details

Active production — what it means for your BOM line

The ULQ2003A: For a BOM that already carries it, the supply channel is stable — no need to qualify a substitute for production continuity.

Seven Darlington pairs in a single 16-DIP

The Vce saturation is 1.6 V max at 500 µA base current and 350 mA collector current. The 50 V collector-emitter breakdown voltage and 150 °C maximum junction temperature define the safe operating area for driving inductive loads like relays, solenoids, and small stepper motors — the Darlington gain means the microcontroller port pins can switch them directly.

Package and compliance

Supplied in a tube, the 16-DIP (0.300", 7.62 mm) footprint is a standard through-hole layout — no board respin needed if replacing an older Darlington array in the same socket. ROHS3 compliant, which covers the full RoHS exemption list including lead in high-melting-temperature solder.

ULQ2003A
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