STWA48N60M2

STMicroelectronics · MDmesh™ Series

STMicroelectronics MDmesh N-Channel MOSFET, STWA48N60M2, 600V Vdss, 42A Id, 70mOhm Rds(on) at 10V, 70nC Qg, TO-247-3 through-hole, -55°C to 150°C junction temperature.

STMicroelectronics STWA48N60M2
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Technical specifications

STWA48N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3060 pF @ 100 V

Technical details

Gate charge and switching frequency — sizing the driver

The STWA48N60M2: Total gate charge is 70 nC at 10 V.

Through-hole TO-247 — thermal and mechanical fit

The TO-247-3 through-hole package with long leads (supplier device package: TO-247 Long Leads) is a standard power package for heatsink mounting. The long-lead variant provides extra stand-off height for better clearance under the package or for mounting on a thick heatsink.

It is ROHS3 compliant.

STWA48N60M2
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