STWA40N95DK5

STMicroelectronics · MDmesh™ DK5 Series

STMicroelectronics MDmesh™ DK5 series, STWA40N95DK5, N-Channel MOSFET, 950 V Vdss, 38 A Id, 130 mOhm Rds(on), TO-247-3 through-hole package, -55°C to 150°C operating temperature.

STMicroelectronics STWA40N95DK5
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Technical specifications

STWA40N95DK5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DK5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation450W (Tc)
Operating temperature-55°C ~ 150°C
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs130mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3480 pF @ 100 V

Technical details

Gate drive and switching profile

The STWA40N95DK5: Gate threshold voltage is 5 V maximum at 100 µA drain current. Recommended drive voltage for minimum on-resistance is 10 V. Total gate charge is 100 nC at 10 V.

Temperature range and thermal design

The 450 W power dissipation at case temperature is a theoretical maximum with an ideal heatsink; real-world dissipation is limited by the thermal resistance of the TO-247 package and the heatsink interface. The long-lead variant adds clearance for high-voltage creepage on the PCB.

STWA40N95DK5
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