STW8N120K5

STMicroelectronics · MDmesh™ K5 Series

STMicroelectronics MDmesh™ K5 N-channel MOSFET, 1200 V drain-source, 6 A continuous drain, 2 Ohm Rds(on) at 10 V, 13.7 nC gate charge, TO-247-3 through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STW8N120K5
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Technical specifications

STW8N120K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs2Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs13.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds505 pF @ 100 V

Technical details

1200 V drain-source — the voltage headroom that defines the application

The STW8N120K5: The 1200 V drain-source rating suits offline flyback converters, PFC boost stages, and auxiliary power supplies.

2 Ohm Rds(on) — conduction loss at the operating point

At 6 A continuous drain, the conduction loss at 2 Ohm is within the 130 W power dissipation limit at the case.

13.7 nC gate charge — switching speed without a heavy driver

Input capacitance Ciss is 505 pF at 100 V drain-source.

The 150°C maximum junction allows a higher case temperature in a sealed enclosure, but the 130 W power dissipation limit at the case must be derated above 25 °C per the datasheet curve.

STW8N120K5
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