STW88N65M5

STMicroelectronics · MDmesh™ V Series

STMicroelectronics MDmesh™ V series, STW88N65M5, N-Channel MOSFET, 650 V Vdss, 84 A Id, 29 mOhm Rds(on) @ 42 A, 10 V, 204 nC Qg, TO-247-3 through hole, 150 °C Tj.

STMicroelectronics STW88N65M5
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[IN STOCK] In Stock: 102 pcs
$11.97/ pc

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Technical specifications

STW88N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C84A (Tc)
Power dissipation450W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 42A, 10V
Gate charge (Qg) (Max) @ vgs204 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8825 pF @ 100 V

Technical details

Switching loss and gate drive — 204 nC Qg

Gate charge of 204 nC at 10 V is moderate for an 84 A MOSFET. A standard gate-driver IC can drive it without excessive cross-conduction.

Through-hole TO-247-3 — field-swappable, no hot-air station needed

The TO-247-3 through-hole package is a field-service favourite. Three leads, a mounting hole for a screw to the heatsink, and the tab is the drain — orientation is obvious. You can swap it on site with a soldering iron and a screwdriver; no hot-air station or reflow profile. The 450 W dissipation rating assumes the case is bolted to a heatsink with thermal compound; running it without one derates that number hard. The ±25 V maximum gate-source voltage is generous, but keep the gate drive within 10 V to stay in the low-Rds(on) region.

No last-time-buy or obsolescence risk for new designs. If you are freezing a BOM, this part is safe to qualify in — no PCN watch needed right now.

STW88N65M5
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