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STMicroelectronics STW72N60DM2AG

STW72N60DM2AG N-Channel MOSFET, 600 V, 66 A, TO-247-3

MPNSTW72N60DM2AG
End of Life

STMicroelectronics STW72N60DM2AG, Automotive AEC-Q101 MDmesh DM2 N-Channel MOSFET, 600 V Vdss, 66 A Id, 42 mOhm Rds(on) at 10 V, TO-247-3 through-hole package.

$12.04Ref. price · indicative, final on quote
STMicroelectronics STW72N60DM2AG datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STW72N60DM2AG specifications
ParameterValue
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C66A (Tc)
Power dissipation446W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 33A, 10V
Gate charge (Qg) (Max) @ vgs121 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5508 pF @ 100 V

Product details

600 V, 66 A N-channel MOSFET for automotive power trains

It is qualified to AEC-Q101, making it suitable for automotive power conversion and motor drive applications where reliability under thermal and electrical stress is required.

On-resistance and gate charge — conduction and switching losses

Total gate charge is 121 nC at 10 V. Input capacitance Ciss is 5508 pF at 100 V drain-source. This capacitance, together with the gate resistance, sets the switching speed and the Miller plateau duration; a higher Ciss slows the turn-on and turn-off edges, increasing crossover losses if the gate drive is not sized accordingly.

Temperature range and package — mounting and thermal management

Frequently asked questions

What is the exact Rds(on) of STW72N60DM2AG at 10V Vgs?

The maximum on-resistance is 42 mOhm at a drain current of 33 A with a 10 V gate-to-source drive. This is the worst-case figure at 25 °C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet.

Can STW72N60DM2AG replace STW70N60DM2?

The STW72N60DM2AG is a higher-current variant in the same MDmesh DM2 family, with a 66 A continuous drain rating versus the STW70N60DM2's lower current. Both share the TO-247-3 package and 600 V Vdss, but the gate charge and Rds(on) differ. Verify the gate-drive and thermal budget against the original design before substituting.

What is the maximum junction temperature for STW72N60DM2AG?

The maximum operating junction temperature is 150 °C.