600 V, 66 A N-channel MOSFET for automotive power trains
It is qualified to AEC-Q101, making it suitable for automotive power conversion and motor drive applications where reliability under thermal and electrical stress is required.
On-resistance and gate charge — conduction and switching losses
This Rds(on) figure sets the conduction loss floor at a given current; at 33 A the dissipation is roughly 46 W (I²R), which must be managed within the 446 W maximum power dissipation rating. Total gate charge is 121 nC at 10 V. For a 20 kHz switching frequency, the average gate-drive current required is about 2.4 mA; the driver must supply this without exceeding its peak current capability during the switching transition. Input capacitance Ciss is 5508 pF at 100 V drain-source. This capacitance, together with the gate resistance, sets the switching speed and the Miller plateau duration; a higher Ciss slows the turn-on and turn-off edges, increasing crossover losses if the gate drive is not sized accordingly.
Temperature range and package — mounting and thermal management
Operating junction temperature range is -55 °C to 150 °C, covering automotive under-hood and chassis environments. The TO-247-3 through-hole package provides a large copper tab for heatsinking; the thermal pad area on the PCB or heatsink must be sized to keep the junction below 150 °C at the maximum load current.
It is ROHS3 compliant, meeting the latest European restriction-of-hazardous-substances directive.