600 V, 66 A N-channel MOSFET for automotive power trains
It is qualified to AEC-Q101, making it suitable for automotive power conversion and motor drive applications where reliability under thermal and electrical stress is required.
On-resistance and gate charge — conduction and switching losses
Total gate charge is 121 nC at 10 V. Input capacitance Ciss is 5508 pF at 100 V drain-source. This capacitance, together with the gate resistance, sets the switching speed and the Miller plateau duration; a higher Ciss slows the turn-on and turn-off edges, increasing crossover losses if the gate drive is not sized accordingly.