Single-channel isolated gate driver for SiC and IGBT switching stages
The STMicroelectronics STGAP2SICSC is a single-channel isolated gate driver built around capacitive coupling technology, delivering 4 A peak output current with 30 ns typical rise and fall times. It is designed to drive SiC MOSFETs, IGBTs, and power MOSFETs in medium-to-high-voltage switching stages where galvanic isolation between the controller and the power device is required. The 5000 Vrms isolation rating and 100 V/ns minimum common-mode transient immunity (CMTI) suit it for motor drives, industrial power supplies, solar inverters, and automotive traction inverters where fast switching edges and noisy environments are the norm. The part is rated over -40 °C to 125 °C, covering the thermal extremes inside a sealed power converter or under-hood electronics bay.
Supply and logic interface
The output-side supply range is 3 V to 5.5 V. Propagation delay is 90 ns maximum in both directions, with pulse-width distortion held to 20 ns maximum.