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STMicroelectronics STW6N95K5

STW6N95K5 MOSFET N-Ch 950V 9A TO-247-3, SuperMESH5

MPNSTW6N95K5
End of Life

STMicroelectronics SuperMESH5™ STW6N95K5, N-Channel MOSFET, 950 V Vdss, 9 A Id, 1.25 Ohm Rds(on) @ 3 A, 10 V, 13 nC Qg, TO-247-3, -55 to 150 °C.

$2.69Ref. price · indicative, final on quote
STMicroelectronics STW6N95K5 datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STW6N95K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.25Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 100 V

Product details

1.25 Ohm Rds(on) — conduction loss at the operating point

The STW6N95K5: At 25 °C junction, 1.25 Ohm yields about 11 W conduction loss at 3 A — well within the 90 W power dissipation limit. The actual Rds(on) rises with junction temperature; at 150 °C it roughly doubles, so the thermal design should budget for that increase.

13 nC gate charge — fast switching without a heavy driver

The low Qg also reduces the gate drive power loss and allows faster rise/fall times, which helps keep switching losses in check.

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