650 V N-channel MOSFET for automotive traction and DC-DC stages
The STW68N65DM6-4AG: AEC-Q101 qualified for automotive applications.
Input capacitance Ciss is 5900 pF at 100 V drain-source bias. This value, together with the gate resistance in the drive loop, determines the turn-on and turn-off delay — relevant for dead-time tuning in half-bridge topologies.
The TO-247-4 package adds a Kelvin-source pin (the fourth pin) that separates the gate-drive return from the power current path, reducing the voltage drop in the gate loop caused by source inductance. This lowers the risk of gate ringing at high di/dt. Maximum power dissipation is 480 W at the case, but the practical dissipation is set by the junction-to-case thermal resistance and the heatsink's ability to pull heat away.