STW68N60M6

STMicroelectronics · MDmesh™ M6 Series

STMicroelectronics MDmesh™ M6 N-Channel MOSFET, TO-247-3, 600V Vdss, 63A Id, 41mOhm Rds(on) @ 31.5A/10V, 106nC Qg, -55 to 150°C.

STMicroelectronics STW68N60M6
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Technical specifications

STW68N60M6 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)0V, 10V
Current - continuous drain (Id) @ 25°C63A (Tc)
Power dissipation390W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs41mOhm @ 31.5A, 10V
Gate charge (Qg) (Max) @ vgs106 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4360 pF @ 100 V

Technical details

600V, 63A N-channel — MDmesh M6 in TO-247-3

The STW68N60M6 is an N-channel MOSFET from the MDmesh™ M6 series. The TO-247-3 package suits high-power PFC stages, server/telecom power supplies, and motor-drive inverters. The 41 mOhm on-resistance at 31.5 A and 10 V gate drive keeps conduction losses manageable.

Gate charge and drive — what the 106 nC Qg means

Gate charge is 106 nC at 10 V. For a hard-switched bridge, the gate-driver must source and sink that charge each cycle. The ±25 V maximum gate rating gives headroom for bootstrap supplies or negative turn-off rails.

The TO-247-3 package's large tab allows direct mounting to a heatsink with a thermal pad or mica insulator.

ROHS3 compliant. The MDmesh M6 generation is ST's current high-voltage MOSFET platform, so supply continuity is stable through franchised and independent channels.

STW68N60M6
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