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STMicroelectronics STW56N65DM2

STMicroelectronics STW56N65DM2

MPNSTW56N65DM2
End of Life

MOSFET N-CH 650V 48A TO247

$11.25Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STW56N65DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation360W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 24A, 10V
Gate charge (Qg) (Max) @ vgs88 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4100 pF @ 100 V