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STMicroelectronics STW45N65M5

STW45N65M5 MOSFET, 650 V 35 A TO-247, 78 mOhm Rds(on)

MPNSTW45N65M5
End of Life

STMicroelectronics MDmesh V N-channel MOSFET, STW45N65M5, 650 V Vdss, 35 A continuous drain, 78 mOhm Rds(on) at 10 V, 91 nC gate charge, TO-247-3 through-hole package, 150 °C junction temperature.

$8.84Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STW45N65M5 Technical Specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation210W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs78mOhm @ 19.5A, 10V
Gate charge (Qg) (Max) @ vgs91 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3375 pF @ 100 V

Product details

650 V, 35 A, 78 mOhm — the hard-switching budget

The TO-247-3 through-hole package is the standard high-current, high-voltage footprint. The exposed backside tab conducts heat to the heatsink; the 150 °C maximum junction temperature gives headroom for transient overloads in motor-drive or UPS applications where the thermal time constant of the heatsink is long.

Gate charge and switching speed

Total gate charge is 91 nC at 10 V gate drive, with input capacitance of 3375 pF measured at 100 V drain. A 1 A gate driver can charge the gate to the Miller plateau in about 90 ns, supporting switching frequencies up to 100 kHz in a full-bridge topology without excessive cross-conduction losses. The 10 V drive voltage is the recommended rail for minimum Rds(on); the gate is rated ±20 V absolute maximum. The 5 V gate-threshold maximum at 250 µA drain current means the device is fully enhanced with a standard 10 V gate drive, but the threshold is high enough to resist spurious turn-on from gate ringing in a half-bridge leg.

Frequently asked questions

Is STW45N65M5 RoHS compliant?

Yes, the STW45N65M5 is listed as ROHS3 compliant, which covers the full RoHS substance restriction without lead-exemption carve-outs.