STW28NM50N

STMicroelectronics · MDmesh™ II Series

STMicroelectronics MDmesh™ II, STW28NM50N, N-Channel MOSFET, 500V Vdss, 21A Id, 158mOhm Rds(on) @ 10.5A 10V, TO-247-3, Through Hole, 150°C Tj.

STMicroelectronics STW28NM50N
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[IN STOCK] In Stock: 90 pcs
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Technical specifications

STW28NM50N specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation150W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs158mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1735 pF @ 25 V

Technical details

500 V N-channel MOSFET for power conversion

It comes in a through-hole TO-247-3 package, built for switch-mode power supplies, power factor correction stages, and high-voltage DC-DC converters where conduction losses matter. The 158 mOhm maximum on-resistance at 10.5 A and 10 V gate drive keeps efficiency in the sweet spot for a 500 V class part.

TO-247-3 is a standard through-hole package with a large tab for heatsink attachment. The three leads are spaced for easy hand-soldering or wave-solder rework. The through-hole format means the part sits off the board, so plan for adequate clearance under the body and a screw or clip for the tab to the heatsink.

STW28NM50N
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