STW20NK50Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH N-Channel MOSFET, STW20NK50Z, 500V Vdss, 17A Id, 270mOhm Rds(on) at 10V, 119nC Qg, TO-247-3 through-hole package.

STMicroelectronics STW20NK50Z
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Technical specifications

STW20NK50Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation190W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs270mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs119 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 25 V

Technical details

500 V N-channel — the Zener-protected SuperMESH switch

Built in a TO-247-3 through-hole package, it dissipates up to 190 W at the case. The three-lead body is the standard high-power footprint for offline converters, PFC stages, and motor-drive inverters where the thermal path runs through the tab to a heatsink.

119 nC gate charge — drive current at switching frequency

Total gate charge is 119 nC at 10 V. Input capacitance is 2600 pF at 25 V drain-source, which sets the driver's dynamic load during the turn-on ramp.

STW20NK50Z
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