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STMicroelectronics STU7N65M2

STU7N65M2 MOSFET N-Ch 650V 5A IPAK, MDmesh

MPNSTU7N65M2
End of Life

STMicroelectronics MDmesh™ N-Channel MOSFET, 650 V drain-source voltage, 5 A continuous drain current, 1.15 Ohm Rds(on) at 10 V, TO-251 (IPAK) through-hole package.

$1.61Ref. price · indicative, final on quote
STMicroelectronics STU7N65M2 datasheet (PDF)
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STU7N65M2 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.15Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds270 pF @ 100 V

Product details

650 V, 5 A, 1.15 Ohm — the switching-loss envelope

The STU7N65M2 N-channel MOSFET has a maximum Rds(on) of 1.15 Ohm at 2.5 A with 10 V gate drive, and a 650 V drain-source voltage rating.

9 nC gate charge — light drive, fast edges

That combination means a modest gate driver can switch this FET at tens of kHz without excessive cross-conduction losses — useful in flyback converters and auxiliary power stages where board space is tight.

Through-hole IPAK — field-swappable

Housed in a TO-251 (IPAK) through-hole package with short leads, this part is a practical field replacement candidate. The three leads are clearly spaced, and the tab is the drain — orientation is unambiguous even without a schematic in hand. No hot-air station needed; a standard iron and solder sucker get it done on site.

Frequently asked questions

What is the STU7N65M2 Rds(on) and drain-source voltage?

Maximum Rds(on) is 1.15 Ohm at 2.5 A drain current with 10 V gate drive. Drain-source voltage rating is 650 V.