600 V N-channel MOSFET in TO-251 IPAK
The STU7N60M2 is an N-channel 600 V, 5 A power MOSFET from ST's MDmesh™ II Plus series, built on a planar stripe technology that balances on-resistance and gate charge for hard-switching topologies. Housed in a TO-251 (IPAK) through-hole package, it targets offline power supplies, PFC stages, and flyback converters where the through-hole mount simplifies heatsink attachment compared to a surface-mount DPAK.
Switching loss and gate drive budget
The gate charge is 8.8 nC at 10 V, which keeps the switching loss manageable at moderate frequencies — a 10 V gate drive rail is required to achieve the rated 950 mOhm Rds(on). Input capacitance is 271 pF at 100 V Vds, a figure that influences the turn-on delay and the driver's peak current requirement; a standard 1 A gate driver will drive this part cleanly into the 100 kHz range.
Thermal and current handling
The 5 A continuous drain current is rated at a case temperature of 25 °C; the 60 W maximum power dissipation assumes a properly heatsinked case — the IPAK tab is the primary thermal path.