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STMicroelectronics STU6N62K3

STU6N62K3 MOSFET N-CH 620V 5.5A IPAK, SuperMESH3

MPNSTU6N62K3
End of Life

STMicroelectronics SuperMESH3™ STU6N62K3, N-channel MOSFET, 620 V Vdss, 5.5 A Id, 1.2 Ohm Rds(on) at 10 V, 30 nC Qg, TO-251 (IPAK) through-hole package.

$1.91Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STU6N62K3 Technical Specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.5A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds875 pF @ 50 V

Product details

620 V N-channel in a TO-251 — what the ratings mean

Gate charge is 30 nC at 10 V, low enough that a standard gate driver IC can switch it at moderate frequencies without excessive drive power.

Switching and conduction — the numbers that matter

Input capacitance is 875 pF at 50 V drain bias — a moderate figure that keeps the gate drive current requirement within the range of a typical totem-pole driver. The maximum gate threshold voltage is 4.5 V at 50 µA drain current, confirming the device is fully enhanced only with a 10 V gate signal. Power dissipation is rated at 90 W case-limited; the TO-251 (IPAK) package's thermal performance depends on the PCB copper area under the tab.

Frequently asked questions

Is STU6N62K3 RoHS compliant?

Yes, the STU6N62K3 is listed as ROHS3 Compliant, meaning it meets the latest EU RoHS directive without exemptions.

What is the Rds(on) of STU6N62K3?

This is the conduction loss floor for the target load.

What is the gate charge of STU6N62K3?

Total gate charge is 30 nC at 10 V gate voltage. This low Qg keeps gate drive power manageable for moderate switching frequencies.