STMicroelectronics · SuperMESH3™ Series
STMicroelectronics SuperMESH3™ STU6N62K3, N-channel MOSFET, 620 V Vdss, 5.5 A Id, 1.2 Ohm Rds(on) at 10 V, 30 nC Qg, TO-251 (IPAK) through-hole package.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 620 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 875 pF @ 50 V |
Input capacitance is 875 pF at 50 V drain bias — a moderate figure that keeps the gate drive current requirement within the range of a typical totem-pole driver.
