STMicroelectronics SuperMESH3™ STU6N62K3, N-channel MOSFET, 620 V Vdss, 5.5 A Id, 1.2 Ohm Rds(on) at 10 V, 30 nC Qg, TO-251 (IPAK) through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 620 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 875 pF @ 50 V |
Input capacitance is 875 pF at 50 V drain bias — a moderate figure that keeps the gate drive current requirement within the range of a typical totem-pole driver.
Yes, the STU6N62K3 is listed as ROHS3 Compliant, meaning it meets the latest EU RoHS directive without exemptions.
This is the conduction loss floor for the target load.
Total gate charge is 30 nC at 10 V gate voltage. This low Qg keeps gate drive power manageable for moderate switching frequencies.