STMicroelectronics MDmesh™ II Plus STU5N60M2, N-Channel MOSFET, 600 V Vdss, 3.7 A Id, 1.4 Ohm Rds(on) at 10 V, 4.5 nC Qg, I-PAK (TO-251) through-hole package, 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.7A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3, IPak, Short Leads |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.4Ohm @ 1.85A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 165 pF @ 100 V |
The STU5N60M2: At 3.7 A continuous drain current, the 1.4 Ohm Rds(on) produces conduction loss that rises with temperature. The 45 W package limit at the case provides derating headroom. Input capacitance is 165 pF at 100 V drain.
The I-PAK (TO-251) package has short leads and a through-hole mounting style.
The part is ROHS3 compliant.
This value is specified at 25 °C junction temperature; on-resistance increases with temperature per the normalised curve in the datasheet.
The 4.5 nC gate charge and 165 pF input capacitance are low for a 600 V device, so it can switch at tens of kilohertz without excessive drive losses. For frequencies above about 200 kHz, the gate-drive power and Miller-effect losses may become significant — a lower-Qg part would be a better fit for very high-frequency designs.