Skip to main content
STMicroelectronics STU4N80K5

STU4N80K5 N-Channel MOSFET, 800V 3A, SuperMESH5™ IPAK

MPNSTU4N80K5
End of Life

STMicroelectronics SuperMESH5™ STU4N80K5, N-channel 800 V 3 A MOSFET, TO-251 IPAK through-hole, 2.5 Ohm Rds(on) at 10 V, 10.5 nC gate charge, -55 to 150 °C.

$1.57Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STU4N80K5 Technical Specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs2.5Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs10.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds175 pF @ 100 V

Product details

800 V N-channel in a TO-251 IPAK — offline flyback and auxiliary supply switch

The STU4N80K5: It is housed in a TO-251 (IPAK) through-hole package with short leads, a common footprint for low-profile board mounting where a TO-220 is too tall. The 10.5 nC total gate charge at 10 V means a standard PWM controller can drive it directly without a separate gate driver IC.

Parametric fit for 240 VAC flyback and PFC stages

The 800 V Vdss provides a 400 V derating margin over a 400 VDC bus (rectified 240 VAC), covering transients and leakage inductance spikes in single-switch flyback converters. The 175 pF input capacitance at 100 V drain bias keeps switching losses low at frequencies up to 100 kHz. Gate threshold voltage is specified at 5 V maximum with 100 µA drain current, ensuring the device is fully enhanced with a standard 10 V gate drive. The ±30 V Vgs max rating gives headroom for gate ringing without avalanche failure.

Frequently asked questions

What is the exact pinout for STU4N80K5?

Design engineers need to validate PCB footprint and gate-drive connections before prototyping.

Is STU4N80K5 in stock at DigiKey, Mouser, or Farnell?

Sourcing buyers need to quickly identify available inventory to fill BOM lines without delay.

What is the current price for STU4N80K5 in 100+ quantities?

Transaction cost is critical for volume procurement and budget planning.

Is STU4N80K5 equivalent to FDP4N80 or other 800V 3A N-channel MOSFETs?

Engineers often cross-reference to validate second-sources or handle shortages.

What is the typical lead time for STU4N80K5 from STMicroelectronics?

Long lead times can disrupt production schedules; buyers need to plan procurement accordingly.

Is STU4N80K5 obsolete or still active?

Lifecycle status determines long-term availability; obsolete parts require immediate redesign or last-time buy.