1000 V N-channel in an IPAK — what it buys you
The STU2NK100Z is an STMicroelectronics SuperMESH™ N-channel power MOSFET rated for 1000 V drain-to-source with a continuous drain current of 1.85 A at 25 °C case temperature. The 8.5 Ohm maximum on-resistance at 900 mA and 10 V gate drive sets the conduction loss floor for auxiliary supply rails, flyback clamp circuits, and high-voltage DC-DC stages where the load current stays under 1 A continuous.
Gate drive and switching budget
Total gate charge is 16 nC at 10 V, which means a standard gate-drive IC or a discrete driver stage can switch this FET at moderate frequencies without excessive drive current. Input capacitance is 499 pF at 25 V drain-source — the Miller plateau is manageable, but the layout should keep the gate loop tight to avoid ringing on the 1000 V rail.
Temperature grade and package reality
The IPAK (TO-251AA) through-hole package with short leads needs the PCB hole pattern matched to the TO-251AA land footprint — the three leads are not the standard TO-220 pitch, so verify the board layout before committing.