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STMicroelectronics STTH9012TV2 — Discrete Semiconductors

ST STTH9012TV2 Fast Recovery Diode, 1200 V 45 A ISOTOP

MPNSTTH9012TV2
Active

STMicroelectronics STTH9012TV2 fast recovery diode, 1200 V, 45 A average per diode, 125 ns trr, 2 independent configuration, ISOTOP chassis-mount package, Active lifecycle.

$29.3600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH9012TV2 specifications
ParameterValue
MountingChassis Mount
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if2.1 V @ 45 A
Current - reverse leakage @ vr30 µA @ 1200 V
Current - average rectified (Io) (per diode)45A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseISOTOP
Diode configuration2 Independent
Reverse recovery time125 ns

Product details

The STTH9012TV2 is a dual fast-recovery epitaxial diode from STMicroelectronics, rated for 1200 V reverse voltage and 45 A average forward current per diode in a 2-independent configuration. The 125 ns reverse recovery time (trr) at 1200 V places it in the fast-recovery class for high-voltage rectification and freewheeling applications — think output rectifiers in 400 VAC input SMPS, boost diodes in power-factor-correction stages, and clamp diodes in motor-drive inverters. The 2.1 V forward drop at 45 A sets the conduction loss budget per leg at roughly 95 W, so the ISOTOP chassis-mount package is sized for bolting to a heatsink with the right thermal interface. Junction temperature maxes at 150 °C, which is the derating ceiling for the thermal stack.

ISOTOP footprint — mounting and thermal design

The ISOTOP® package (also known as ISOTOP) is a standard 4-pin power module with M4 screw terminals for chassis mounting. Two independent diode die share the same baseplate; the cathode of each diode is electrically isolated from the mounting base, so a single heatsink can be common across both legs without insulation pads. The 30 µA reverse leakage at 1200 V is a room-temperature typical — expect leakage to double roughly every 10 °C above 25 °C junction, so budget for it in the bias network at high-temperature operation.

STMicroelectronics lists the STTH9012TV2 as Active.

Frequently asked questions

What is the reverse recovery time of STTH9012TV2?

The reverse recovery time (trr) is 125 ns, measured under standard test conditions for a fast-recovery diode rated at 1200 V.

Is STTH9012TV2 obsolete or active?

STMicroelectronics lists the STTH9012TV2 as Active.