SiC Schottky — zero-recovery charge, 600 V bus
The STPSC2006CW: SiC Schottky technology delivers zero reverse-recovery charge — the diode switches off with no stored minority carriers, so it eliminates the recovery losses that plague ultrafast silicon diodes in hard-switched PFC and boost stages. That means the heatsink runs cooler and the switching transistor sees no reverse-recovery current spike at turn-on.
Forward drop and thermal margin
Forward voltage is 1.7 V maximum at 10 A per diode — a typical figure for a 600 V SiC Schottky in this current class. The junction temperature range spans -40°C to 175°C, so the diode handles the self-heating of continuous conduction in an industrial PFC stage without derating. Reverse leakage is 150 µA at 600 V, which is low enough that it does not drive standby losses in a mains-fed supply.
TO-247-3 — rework-friendly, easy to heatsink
The through-hole TO-247-3 package gives you a large copper tab for bolting to a heatsink — the thermal path is direct, no pad-to-board spreading needed. For a rework tech, that means the part lifts clean with hot air or a soldering iron without cooking the board; the three leads are wide-spaced and the tab is clearly marked for cathode identification. Pin 1 is the anode of the first diode, pin 2 the common cathode, pin 3 the anode of the second diode — no orientation ambiguity.