STTH8L06G-TR

STMicroelectronics

STMicroelectronics STTH8L06G-TR, Fast Recovery Diode, 600 V, 8 A, 105 ns trr, 1.3 Vf @ 8 A, D2PAK, Surface Mount, ROHS3 Compliant.

STMicroelectronics STTH8L06G-TR
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STTH8L06G-TR specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 8 A
Current - reverse leakage @ vr8 µA @ 600 V
Current - average rectified8A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time105 ns

Technical details

105 ns reverse recovery — the switching-speed ceiling

The STTH8L06G-TR is a 600 V, 8 A fast-recovery rectifier from STMicroelectronics, rated for reverse recovery time of 105 ns. That trr places it in the class of diodes suited for continuous-conduction-mode (CCM) power-factor-correction stages and the output rectifier of 100–200 kHz LLC resonant converters, where the recovery charge directly impacts the MOSFET turn-on loss and EMI signature.

8 A at 600 V — thermal budget in a D2PAK

Averaged forward current is 8 A with a maximum forward voltage drop of 1.3 V at that current. At 8 A the conduction loss is 10.4 W; the D2PAK (TO-263AB) package relies on the PCB copper pad on the tab to dissipate that heat.

Reverse leakage at rated voltage

Maximum reverse leakage is 8 µA at 600 V, measured at 25°C. Leakage doubles roughly every 10°C rise, so at 125°C junction the leakage current can approach 100 µA — still negligible for a continuous 8 A load, but worth checking if the diode sits across a high-impedance node like a bootstrap supply.

The part is ROHS3 compliant. For ongoing production builds the supply risk is low; the diode can be qualified into a BOM without scheduling a second-source qualification window.

STTH8L06G-TR
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