STTH8L06FP

STMicroelectronics

STMicroelectronics STTH8L06FP, Fast Recovery Diode, 600 V, 8 A, 105 ns trr, TO-220-2 Full Pack Isolated Tab, Through Hole, ROHS3 Compliant, Active.

STMicroelectronics STTH8L06FP
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Technical specifications

STTH8L06FP specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 8 A
Current - reverse leakage @ vr8 µA @ 600 V
Current - average rectified8A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2 Full Pack, Isolated Tab
Reverse recovery time105 ns

Technical details

600 V, 8 A fast recovery diode with 105 ns trr

The STTH8L06FP is a 600 V, 8 A general-purpose fast recovery diode from STMicroelectronics, built with standard silicon technology and housed in a TO-220-2 Full Pack with an isolated tab (TO-220FPAC). Its 105 ns reverse recovery time makes it a fit for hard-switched power converters where recovery charge drives switching losses — think PFC boost stages, flyback clamp diodes, and output rectification in 100-300 W offline supplies.

At 105 ns trr, the STTH8L06FP sits in the fast recovery class (under 500 ns at >200 mA). In a continuous-conduction-mode PFC, that recovery time limits the reverse-recovery current spike through the boost diode at turn-off, keeping the MOSFET's switching loss within the thermal budget. The 1.3 V forward drop at 8 A is the conduction loss side of the equation — at 8 A average, expect about 10.4 W of forward dissipation before derating for junction temperature.

TO-220FPAC — isolated tab thermal path

That simplifies assembly and reduces the thermal resistance stack, though the junction-to-case thermal impedance is higher than a standard TO-220 with a conductive tab.

STTH8L06FP
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