STMicroelectronics
STMicroelectronics STTH812DI, Fast Recovery Diode, 1200 V, 8 A, 100 ns reverse recovery time, TO-220AC insulated, through-hole, ROHS3 compliant.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 2.2 V @ 8 A |
| Current - reverse leakage @ vr | 8 µA @ 1200 V |
| Current - average rectified | 8A |
| Operating temperature - junction | 175°C (Max) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Technology | Standard |
| Case | TO-220-2 Insulated, TO-220AC |
| Reverse recovery time | 100 ns |
That 100 ns trr puts it in the fast-recovery class, meaning it's built for hard-switching topologies where reverse-recovery losses eat into efficiency: power-factor correction stages, output rectification in flyback and half-bridge converters, and snubber clamping in motor drives. Junction temperature maxes out at 175 °C, which gives thermal margin in a cramped enclosure.
