STTH810GY-TR

STMicroelectronics

STMicroelectronics STTH810GY-TR, Fast Recovery =< 500ns, > 200mA (Io), Standard Diode, 8A, 1000V, 85ns trr, AEC-Q101, D²PAK (TO-263), Surface Mount.

STMicroelectronics STTH810GY-TR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STTH810GY-TR specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 8 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified8A
Operating temperature - junction-40°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time85 ns

Technical details

85 ns trr — the switching-speed anchor for a 1 kV, 8 A boost diode

The STTH810GY-TR is a standard fast-recovery epitaxial diode from STMicroelectronics, rated for 8 A average rectified current and 1000 V repetitive reverse voltage. Its 85 ns reverse recovery time (trr) places it in the fast-recovery class for continuous-current-mode (CCM) power factor correction and output rectification stages where the diode's turn-off loss must stay low enough to avoid thermal runaway in the D²PAK package.

AEC-Q101 and 175 °C junction — built for the engine bay and the high-side rail

The base product number STTH810 covers multiple trr and package variants; the GY suffix identifies the D²PAK (TO-263) tape-and-reel version.

Forward drop and leakage — the thermal budget numbers

Reverse leakage is 5 µA at the full 1000 V blocking voltage, a low figure that helps maintain efficiency in light-load or standby conditions.

The STTH810GY-TR is an active, in-production part. No official pin-compatible second source or successor is listed in the component record; for dual-source planning, a parametric search across 1 kV, 8 A fast-recovery diodes in D²PAK from other major manufacturers is the practical route.

STTH810GY-TR
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