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STMicroelectronics STTH810FP — Discrete Semiconductors

STTH810FP Fast Recovery Diode, 1000 V 8 A, 85 ns trr

MPNSTTH810FP
Active

STMicroelectronics STTH810FP, Fast Recovery Diode, Speed Fast Recovery =< 500ns, > 200mA (Io), 1000 V, 8 A, 85 ns trr, TO-220-2 Full Pack Isolated Tab, Through Hole.

$2.4500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH810FP specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 8 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified8A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2 Full Pack, Isolated Tab
Reverse recovery time85 ns

Product details

85 ns reverse recovery — what it buys in a PFC or boost stage

The STTH810FP is an 8 A, 1000 V fast-recovery diode from STMicroelectronics built with planar technology. The TO-220 Full Pack (TO-220FPAC) has an isolated tab, so no mica insulator or thermal pad is needed against a grounded heatsink — a time-saver in through-hole assembly.

1000 V / 8 A — the operating envelope

Rated 1000 V DC reverse (Vr) and 8 A average rectified current (Io), the STTH810FP handles 240 VAC or 277 VAC rectified rails with margin. Forward voltage is 2 V max at 8 A, which at 85 ns recovery means the diode runs warm but stays inside a 175°C junction limit. The 5 µA reverse leakage at 1000 V is clean enough for a high-voltage bulk rail; no pre-load resistor needed to balance the bus.

Product status is Active. That means no last-time-buy window to track, no forced redesign for a replacement part.

Frequently asked questions

What is the reverse recovery time of STTH810FP?

85 ns (trr), which qualifies as Fast Recovery (≤ 500 ns, > 200 mA Io). This is the parameter that drives switching loss in high-frequency rectifier and PFC stages.