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STMicroelectronics STTH806TTI — Discrete Semiconductors

STTH806TTI Fast Recovery Diode, 600 V, 8 A, 30 ns trr

MPNSTTH806TTI
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STMicroelectronics TURBOSWITCH STTH806TTI, fast recovery standard diode, 600 V DC reverse voltage, 8 A average rectified per diode, 30 ns reverse recovery time, TO-220-3 through-hole package.

$5.4200Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH806TTI specifications
ParameterValue
SeriesTURBOSWITCH™
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if3.6 V @ 8 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified (Io) (per diode)8A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3
Diode configuration1 Pair Series Connection
Reverse recovery time30 ns

Product details

TURBOSWITCH fast recovery in a TO-220 pair

The STTH806TTI is a STMicroelectronics TURBOSWITCH series fast recovery standard diode, configured as a pair of series-connected diodes in a single TO-220-3 through-hole package.

The 30 ns reverse recovery time places this diode in the fast-recovery class (≤500 ns, >200 mA). In a continuous-conduction-mode PFC boost stage or a high-frequency rectifier, a 30 ns trr cuts the reverse-recovery charge that the MOSFET or IGBT must absorb at turn-on, reducing switching loss and ringing. The 600 V blocking voltage covers off-line rectified rails up to 400 V nominal with margin.

Mounting and thermal path

The TO-220AB Insulated supplier device package provides electrical isolation between the tab and the heatsink — no insulating washer needed, though thermal compound still helps. The through-hole TO-220-3 body is a standard footprint; the series-connected pair shares the common cathode tab.

Frequently asked questions

What is the reverse recovery time of STTH806TTI?

The reverse recovery time (trr) is 30 ns.