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STMicroelectronics STTH806D — Discrete Semiconductors

STTH806D Diode, 600V 8A Fast Recovery, TO-220AC

MPNSTTH806D
Obsolete

STMicroelectronics STTH806D, general purpose fast recovery diode, 600 V reverse, 8 A average, 55 ns trr, TO-220AC, through-hole, junction temp 175°C max.

$2.3500Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STTH806D specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.85 V @ 8 A
Current - reverse leakage @ vr8 µA @ 600 V
Current - average rectified8A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2
Reverse recovery time55 ns

Product details

600 V, 8 A, 55 ns — PFC and boost stage fit

The STTH806D is a 600 V, 8 A general-purpose fast recovery diode from STMicroelectronics, housed in a TO-220AC through-hole package. Its 55 ns reverse recovery time (trr) places it in the fast-recovery class (≤500 ns, >200 mA Io).

55 ns trr — switching loss anchor

With a trr of 55 ns, the STTH806D limits reverse-recovery charge in continuous-current-mode PFC stages. At 8 A forward current and 1.85 V forward drop (Vf max at 8 A), conduction loss is roughly 14.8 W at full load — the junction temperature ceiling of 175°C sets the heatsink requirement. Reverse leakage is 8 µA at 600 V, a figure that rises with junction temperature and must be factored into standby-loss budgets.

For existing designs, a last-time-buy or a parametric search for a TO-220AC fast-recovery diode with ≥600 V, ≥8 A, and ≤55 ns trr will identify a functional replacement.

Frequently asked questions

Can STTH806D be used for 600 V applications?

Yes — the maximum DC reverse voltage (Vr) is rated at 600 V, so it is suitable for 600 V bus or rectifier stages within the voltage derating guidelines.