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STMicroelectronics STTH802B-TR — Discrete Semiconductors

STTH802B-TR 200V 8A Fast Recovery Diode, DPAK

MPNSTTH802B-TR
Active

STMicroelectronics STTH802B-TR, standard fast recovery diode, 200 V, 8 A, 30 ns trr, DPAK surface mount, tape and reel.

$1.2900Ref. price · indicative, final on quote
STMicroelectronics STTH802B-TR datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH802B-TR specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.05 V @ 8 A
Current - reverse leakage @ vr6 µA @ 200 V
Current - average rectified8A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Reverse recovery time30 ns

Product details

8 A, 200 V fast recovery in a DPAK footprint

The STTH802B-TR is an 8 A, 200 V fast recovery diode in the DPAK (TO-252) surface-mount package, built on STMicroelectronics' planar technology.

Forward drop and recovery — the loss trade-off

At 8 A forward current the maximum forward voltage is 1.05 V, which translates to roughly 8.4 W of conduction loss at full rated current — the DPAK's exposed pad on the PCB copper plane is the primary heat path, so the board layout determines whether that heat stays within the 175 °C junction limit. The 30 ns trr is specified at typical test conditions; in a hard-switched topology the recovery charge (Qrr) drives the switching loss, and a faster recovery means lower dissipation in the diode and less ringing that couples into the gate drive or EMI filter. The 6 µA reverse leakage at 200 V is a room-temperature figure — leakage doubles roughly every 10 °C, so at 125 °C junction it climbs into the hundreds of microamps and should be factored into the standby loss budget.

Active production, RoHS3, and sourcing posture

STMicroelectronics lists the STTH802B-TR as an active product with RoHS3 compliance (2011/65/EU amendment 2015/863).

Frequently asked questions

What is the reverse recovery time of STTH802B-TR?

The reverse recovery time (trr) is 30 ns, placing it in the fast recovery class (≤ 500 ns, > 200 mA Io). This suits hard-switched topologies above 50 kHz where recovery losses and ringing matter.

Does STTH802B-TR drop in for STTH302S?

No — the STTH302S is a 3 A rated part in the same DPAK package, while the STTH802B-TR is rated for 8 A. The footprint is the same, but the current rating and the thermal design must be re-evaluated for the higher load. The trr is 30 ns on the 8 A part versus 35 ns on the 3 A part.