8 A, 200 V fast recovery in a DPAK footprint
The STTH802B-TR is an 8 A, 200 V fast recovery diode in the DPAK (TO-252) surface-mount package, built on STMicroelectronics' planar technology.
Forward drop and recovery — the loss trade-off
At 8 A forward current the maximum forward voltage is 1.05 V, which translates to roughly 8.4 W of conduction loss at full rated current — the DPAK's exposed pad on the PCB copper plane is the primary heat path, so the board layout determines whether that heat stays within the 175 °C junction limit. The 30 ns trr is specified at typical test conditions; in a hard-switched topology the recovery charge (Qrr) drives the switching loss, and a faster recovery means lower dissipation in the diode and less ringing that couples into the gate drive or EMI filter. The 6 µA reverse leakage at 200 V is a room-temperature figure — leakage doubles roughly every 10 °C, so at 125 °C junction it climbs into the hundreds of microamps and should be factored into the standby loss budget.
Active production, RoHS3, and sourcing posture
STMicroelectronics lists the STTH802B-TR as an active product with RoHS3 compliance (2011/65/EU amendment 2015/863).